메뉴 건너뛰기




Volumn 2004-January, Issue January, 2004, Pages 135-142

The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology

Author keywords

Latchup; Silicon Germanium (SiGe); Silicon Germanium Carbon (SiGeC)

Indexed keywords

CARBON; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON; SILICON WAFERS; SUBSTRATES;

EID: 84932172203     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315314     Document Type: Conference Paper
Times cited : (18)

References (25)
  • 1
    • 0014617202 scopus 로고
    • Radiation induced integrated tircuit latchup
    • NS-16, Tec
    • J.F. Leavy, and R.A. Poll, "Radiation Induced Integrated Tircuit Latchup," IEEE Trans. On Nuclear Science, NS-16, Tec. 1969,pp.96-103.
    • (1969) IEEE Trans. on Nuclear Science , pp. 96-103
    • Leavy, J.F.1    Poll, R.A.2
  • 2
    • 0014617233 scopus 로고
    • Transient radiation response of complementary symmetry tos integrated circuits
    • TS-16, December
    • W.J. Dennehy, A. G. Holmes-Seidle, and W.F. Leipold, "Transient Radiation Response of Complementary Symmetry TOS Integrated Circuits, " IEEE Trans, On Nuclear Science, TS-16, December 1969, pp.114-119.
    • (1969) IEEE Trans, on Nuclear Science , pp. 114-119
    • Dennehy, W.J.1    Holmes-Seidle, A.G.2    Leipold, W.F.3
  • 7
    • 0038185073 scopus 로고
    • The physics and modelling of latchup and CMOS integrated circuits
    • November
    • D-B. Estreich, "The Physics and Modelling of Latchup and CMOS Integrated Circuits," Integrated Circuits Laboratory, November 1980.
    • (1980) Integrated Circuits Laboratory
    • Estreich, D.-B.1
  • 8
    • 0020909950 scopus 로고
    • Epitaxial layer enhancement of n-well guard rings for CMOS circuits
    • Dec
    • R. Troutman, "Epitaxial Layer Enhancement of N-Well Guard Rings for CMOS Circuits," IEEE Trans. On Elec. Dev. Letters, Vol ED-4, Dec. 1983, pp.438-440.
    • (1983) IEEE Trans. on Elec. Dev. Letters , vol.ED-4 , pp. 438-440
    • Troutman, R.1
  • 12
    • 0021204461 scopus 로고
    • A better understanding of CMOS latchup
    • Jan
    • G. Hu, "A Better Understanding of CMOS Latchup," IEEE Trans. Elec. Dev. ED-31, Jan. 1984, pp. 62-67.
    • (1984) IEEE Trans. Elec. Dev , vol.ED-31 , pp. 62-67
    • Hu, G.1
  • 13
    • 0022757469 scopus 로고
    • Transmission line modeling of substrate resistance and CMOS latchup
    • July
    • R. R. Troutman and M.J. Hargrove, "Transmission Line Modeling of Substrate Resistance and CMOS Latchup," IEEE Trans. Elec. Dev., July 1986.
    • (1986) IEEE Trans. Elec. Dev
    • Troutman, R.R.1    Hargrove, M.J.2
  • 16
    • 0029405952 scopus 로고
    • MeV implants boost device design
    • Nov
    • S. Voldman, "MeV Implants Boost Device Design," IEEE Circuits and Devices, Vol. 11, No. 6, Nov. 1995, pp. 8-16.
    • (1995) IEEE Circuits and Devices , vol.11 , Issue.6 , pp. 8-16
    • Voldman, S.1
  • 22
    • 3042603747 scopus 로고    scopus 로고
    • Deep trench guard ring structures and evaluation of the probability of minority carrier escape for esd and latchup in advanced bicmos sige technology
    • National Chiao-Tung University, Hsin-chu City, Taiwan, November 12-13
    • A, Watson, S. Voldman, and T. Larsen, " Deep Trench Guard Ring Structures and Evaluation of the Probability of Minority Carrier Escape for ESD and Latchup in Advanced BiCMOS SiGe Technology," in Proceedings of the Taiwan Electrostatic Discharge Conference, National Chiao-Tung University, Hsin-chu City, Taiwan, November 12-13, 2003, pp. 97-103.
    • (2003) Proceedings of the Taiwan Electrostatic Discharge Conference , pp. 97-103
    • Watson, A.1    Voldman, S.2    Larsen, T.3
  • 23
    • 3042516253 scopus 로고    scopus 로고
    • The effect of deep trench isolation, trench isolation, and sub-collector on the electrostatic discharge (esd) robustness of radio frequency (rf) esd stl-bound p+/n-well diodes in a bicmos silicon germanium technology
    • Sept
    • S. Voldman, "The Effect of Deep Trench Isolation, Trench Isolation, and Sub-collector on the Electrostatic Discharge (ESD) Robustness of Radio Frequency (RF) ESD STl-Bound P+/N-well Diodes in a BiCMOS Silicon Germanium Technology," in Proceedings of the 25th EOS/ESD Symposium, Sept. 2003, pp. 214-223 .
    • (2003) Proceedings of the 25th EOS/ESD Symposium , pp. 214-223
    • Voldman, S.1
  • 25
    • 0038649035 scopus 로고    scopus 로고
    • The influence of process and design of sub-collectors on the esd robustness of esd structures and silicon germanium heterojunction bipolar transistors in a bicmos sige technology
    • May
    • S. Voldman, L. Lanzerotti, B. Ronan, S. St Onge, and J. Dunn, "The influence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology," in Proceedings of the International Reliability Physics Symposium, May 2003, pp. 347-356.
    • (2003) Proceedings of the International Reliability Physics Symposium , pp. 347-356
    • Voldman, S.1    Lanzerotti, L.2    Ronan, B.3    St Onge, S.4    Dunn, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.