Numerical modelling of mechanisms involved in latchup triggering by a laser beam

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 944-951

  Fouillat, P ^a   Lapuyade, H ^a   Touboul, A ^a   Dom, J P ^a   Gaillard, R ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; INFRARED RADIATION; LASER BEAM EFFECTS; LASER PULSES; MATHEMATICAL MODELS; SENSITIVITY ANALYSIS; SUBSTRATES;

LATCHUP TRIGGERING; PARASITIC STRUCTURE; PHOTOINDUCED CURRENT;

INTEGRATED CIRCUITS;

EID: 0030172838     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510738     Document Type: Article

References (13)

1. T. Aoki, "Latch-up on CMOS/EPI Devices", IEEE Trans. Electron. Devices, Vol 37, No. 8, pp. 1839-1842, 1990.
2. R. Troutman, "Latchup in CMOS technology", Kluwers Academic Publishers, 1988.
3. T. Aoki, "A practical high-latchup Immunity Design Methodology for Internal Circuits in the Standard Cell-based CMOS/BiCMOS LSI's", IEEE Trans. Electron. Devices, Vol 40, No. 8, pp. 1432-1436, 1993.
4. P. Fouillat, Y. Danto and J.P. Dom, "Localization and characterization of Latch-up sensitive areas using a laser beam : influence on design rules of ICs in CMOS technology", QREI, Vol 9, pp. 477-482, 1993.
5. M. Jonsson and S. Mattsson, "Transient Radiation Response of VLSI Circuits : Shadowing Effects and Pulse Widths dependence in Laser Measurements", RADECS91, pp. 450-454, Montpellier, 1991.
6. S. Buchner, K. Kang, W.J. Stapor, A.B. Campbell, A. R. Knudson, P. McDonald and S. Rivet, "Pulsed Laser-induced SEU in integrated circuits : a practical method for Hardness Assurance Testing", IEEE Transactions on Nuclear Science, Vol 37, No. 6, pp. 1825-1831, 1990.
7. A.H. Johnston and B.W. Hughlock, "Latchup in CMOS from Single Particles", IEEE Transactions on Nuclear Science, Vol 37, No. 6, pp. 1886-1893, 1990.
8. J.S. Melinger, S. Buchner, D. McMorrow, W.J. Stapor, T. R. Weatherford and A. B. Campbell, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies", IEEE Transactions on Nuclear Science, Vol 41, No. 6, pp. 2574-2584, 1994.
9. H. Lapuyade, P. Fouillat, Y. Maidon, J. Tomas and J.P. Dom, "Design For Testability of Built-in Laser Sensitive Cells", ESREF 95, Arcachon, 1995.
10. T. Aoki, "Dynamics of Heavy-Ion-Induced Latchup in CMOS Structures", IEEE Trans. Electron. Devices, Vol 35, No. 11, pp. 1885-1891, 1988.
11. T. Ohzone and J. Iwata, "Transient Latchup Characteristics in n-Well CMOS", IEEE Trans. Electron. Devices, Vol 39, No 8, pp. 1870-1875, 1992.
12. R. Menozzi, L. Selmi, E. Sangiorgi and B. Ricco, "Effects of the Interaction of Neighboring Structures on the Latch-up behaviorof C-MOS ICÕs", IEEE Trans. Electron. Devices, Vol 38, No. 8, pp. 1978-1981, 1991.
13. P. Fouillat, H. Lapuyade, Y. Maidon and J.P. Dom, "Analysis of latchup susceptibility to internal logical states by using a laser beam", EOBT95, Wuppertal, August 1995.