Electrical bias stress related degradation of AlGaN/GaN HEMTs

Electronics Letters

Volumn 39, Issue 16, 2003, Pages 1217-1218

  Koley, G ^a   Kim, H ^a   Eastman, L F ^a   Spencer, M G ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; STRESS ANALYSIS;

DRAIN CURRENT TRANSIENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0041427697     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030773     Document Type: Article

References (7)

1. EASTMAN, L.F., TILAK, V., SMART, J., GREEN, B.M., CHUMBES, E.M., DIMITROV, R., KIM, H., AMBACHER, O., WEIMANN, N., PRUNTY, T., MURPHY, M., SCHAFF, W.J., and SHEALY, J.R.: 'Undoped AlGaN/GaN HEMTs for microwave power amplification', IEEE Trans. Electron Devices, 2001, 48, (3), pp. 479-485
2. KELLER, S., WU, Y., PARISH, G., ZIANG, N., XU, J.J., KELLER, B.P., DENBAARS, S.P., and MISHRA, U.K.: 'Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB', IEEE Thins. Electron Devices, 2001, 48, (3), pp. 552-559
3. VETURY, R., ZHANG, N.Q., KELLER, S., and MISHRA, U.K.: 'The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs', IEEE Trans. Electron Devices, 2001, 48, (3), pp. 560-566
4. GREEN, B.M., CHU, K.K., CHUMBES, E.M., SMART, J.A., SHEALY, J.R., and EASTMAN, L.F.: 'The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs', IEEE Electron Device Lett., 2000, 21, (6), pp. 268-270
5. x passivation and UV illumination', IEEE Trans. Electron Devices, 2003 (to be published)
6. KOLEY, G., and SPENCER, M.G.: 'Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy', J. Appl. Phys., 2001, 90, (1), pp. 337-344
7. KIM, H., THOMPSON, R.M., TILAK, V., PRUNTY, T.R., SHEALY, J.R., and EASTMAN, L.F.: 'Effects of SiN passivation and high electric field on AlGaN/GaN HFET degradation', IEEE Electron Device Lett., 2003 (to be published)