Hot carrier aging degradation phenomena in GaN based MESFETs

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1375-1380

  Rampazzo, F ^a   Pierobon, R ^a   Pacetta, D ^a   Gaquiere, C ^b   Theron, D ^b   Boudart, B ^c   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b INSTITUT D ELECTRONIQUE   (France)

^c Université de Caen Normandie   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; GALLIUM NITRIDE; HOT CARRIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; STRESS ANALYSIS;

DRAIN CONTACTS; ROOM TEMPERATURE;

MESFET DEVICES;

EID: 4544281984     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.017     Document Type: Conference Paper

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