Degradation characteristics of AlGaN/GaN high electron mobility transistors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 214-218

  Kim, H ^a   Tilak, V ^a   Green, B M ^a   Cha, H ^a   Smart, J A ^a   Shealy, J R ^a   Eastman, L F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; HOT CARRIERS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SILICON CARBIDE; SILICON NITRIDE; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; DEGRADATION CHARACTERISTICS; PASSIVATION FILM; RELIABILITY TEST;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035013119     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. GaN microwave electronics
2. High al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance
3. High temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
4. Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
5. Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's
6. Schottky barrier engineering in III-V nitrides via the piezoelectric effect
7. Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIFFET's
8. Hot carrier reliability in high-power PHEMT's
9. High reliability power GaAs MESFET under RF overdrive condition
10. Gradual degradation under RF overdrive of MESFETs and PHEMTs