Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 79, Issue 8, 2001, Pages 1196-1198

  Shigekawa, Naoteru ^a   Shiojima, Kenji ^a   Suemitsu, Tetsuya ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035920698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1398332     Document Type: Article

References (14)

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