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Volumn 242-244, Issue , 2005, Pages 169-184

Germanium in Czochralski silicon

Author keywords

Germanium Doping; Mechanical Strength; Oxygen Precipitation; Silicon; Voids

Indexed keywords

CRYSTAL LATTICES; CRYSTALS; DOPING (ADDITIVES); OXYGEN; PRECIPITATION (CHEMICAL); SILICON; STRENGTH OF MATERIALS;

EID: 26044478171     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.242-244.169     Document Type: Review
Times cited : (10)

References (59)
  • 42
    • 84912637240 scopus 로고
    • edited by W. M. Bullis and L. C. Kimerling, The Electrochemical Society, Pennington, NJ
    • B. Goldsmith, L. Jastrzebski, and R. Soyden, in: Defects in Silicon, edited by W. M. Bullis and L. C. Kimerling, The Electrochemical Society, Pennington, NJ, (1983) 142.
    • (1983) Defects in Silicon , pp. 142
    • Goldsmith, B.1    Jastrzebski, L.2    Soyden, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.