Hydrogen annealing of grown-in voids in nitrogen-doped Czochralski grown silicon

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 399-403

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SILICON WAFERS; SUPERSATURATION;

CRYSTAL ORIGINATED PARTICLES (COP);

CRYSTAL GROWTH FROM MELT;

EID: 0038509878     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/301     Document Type: Article

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