Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1241-1245

  Itsumi, Manabu ^a   Maeda, Masahiko ^a   Ueki, Takemi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005090438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368190     Document Type: Article

References (19)

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