Micro-Precipitation of oxygen in As-grown CZSi of doping Ge

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 10, 2002, Pages 1073-1077

  Zhang, Weilian ^a   Li, Jiaxi ^a   Chen, Hongjian ^a   Sun, Junsheng ^a   Zhang, Jianxin ^a   Zhang, Enhuai ^a   Zhao, Hongsheng ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Crystal defect; CZSi doped Ge; Oxygen precipitation; Segregation

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; OXYGEN; PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM;

CZOCHRALSKI SILICON DOPED GERMANIUM; CZOCHRALSKI TECHNOLOGY; GERMANIUM SILICON CRYSTAL; OXYGEN MICRO PRECIPITATION;

SEMICONDUCTING SILICON;

EID: 0036814817     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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