Effects of nitrogen on dislocations in silicon during heat treatment

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 553-556

  Li, Dongsheng ^a   Yang, Deren ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); NITROGEN; SEMICONDUCTOR GROWTH; STRESS RELAXATION;

PINNING EFFECT;

SEMICONDUCTING SILICON;

EID: 0033340852     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00571-2     Document Type: Article

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