High Strength Si Wafers with Heavy B and Ge Codoping

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 B, 2003, Pages

  Huang, Xinming ^a   Sato, Tsuyoshi ^a   Nakanishi, Masami ^a   Taishi, Toshinori ^b   Hoshikawa, Keigo ^b  

^a Silicon Technology Corporation   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

Heat treatment; Heavy B and Ge codoping; Heavy B doping; Si wafers; Sirtl etching; Slip dislocations; Thermal stress

Indexed keywords

BORON; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; GERMANIUM; HEAT TREATMENT; OPTICAL MICROSCOPY; OXYGEN; THERMAL STRESS;

HEAVY B AND GE CODOPING; HEAVY B DOPING; SIRTL ETCHING; SLIP DISLOCATIONS;

SILICON WAFERS;

EID: 1242310459     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1489     Document Type: Article

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