Probabilistic strength of {1 1 1} n-type silicon

Journal of Materials Science: Materials in Electronics

Volumn 11, Issue 4, 2000, Pages 291-303

  Wereszczak, A A ^a   Barnes, A S ^a,d   Breder, K ^a,c   Binapal, Sukhminder ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Gennum Corporation   (Canada)

^c Saint Gobain Abrasives   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); CHEMICAL POLISHING; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ETCHING; FRACTOGRAPHY; STRENGTH OF MATERIALS; TENSILE STRESS; WEIBULL DISTRIBUTION;

SILICON PRISMATIC BARS;

SEMICONDUCTING SILICON;

EID: 0034204546     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008973231053     Document Type: Article

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