Growth and characterization of Ge1-xSix (x ≤ 10 at%) single crystals

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 125-135

  Dold, P ^a   Barz, A ^a   Recha, S ^a   Pressel, K ^b   Franz, M ^b   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DIFFRACTOMETERS; ENERGY DISPERSIVE SPECTROSCOPY; EXCITONS; INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

BRIDGMAN METHOD; ETCH PIT DENSITY; MACROSEGREGATION; MICROSEGREGATION;

CRYSTAL GROWTH FROM MELT;

EID: 0032474956     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00410-2     Document Type: Article

References (28)

1. G.D. Cody, B. Abeles, J.P. Dismukes, F.D. Rosi, Proc. IX Int. Conf. on Thermoelectrics, 1990, p. 182.
2. M.Ya. Bakirov, R.S. Madatov, Yu.M. Mustagaev, R.B. Gasymov, Appl. Sol. Energy 22 (1986) 9.
3. R. Madar, E. Mastromatteo, A. Magerl, K.-D. Liss, C. Bernard, Surf. Coatings Tech. 54/55 (1992) 229.
4. H.J. Koh, N. Schäfer, K. Shimamura, T. Fukuda, J. Crystal Growth 167 (1996) 38.
5. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbe, J.Y.-C. Sun, B.S. Meyerson, T. Tice, IEEE Trans, on Electron. Dev. 42 (1995), Parts I and II.
6. G.L. Patton, S.S. Lyen, S.L. Delage, S. Tiwari, J.M.C. Stork, IEEE Electron Dev. Lett. EDL-9 (1988) 165.
7. T.P. Pearsall, CRC Crit. Rev. Solid State Mater. Sci. 15 (1989) 551.
8. J. Schilz, V.N. Romanenko, J. Mater. Sci. Mater. Electron. 6 (1995) 265.
9. H. Stöhr, W. Klemm, Z. Anorg. Allg. Chem. 241 (1939) 305.
10. F.X. Hassion, A.J. Goss, F.A. Trumbore, J. Phys. Chem. 59 (1955) 1118.
11. N.V. Abrosimov, S.N. Rossolenko, V. Alex, A. Gerhardt, W. Schröder, J. Crystal Growth 166 (1996) 657.
12. I. Yonenaga, A. Matsui, S. Tozawa, K. Sumino, T. Fukuda, J. Crystal Growth 154 (1995) 275.
13. D. Schulz, J. Wollweber, N. Darowski, W. Schröder, Cryst. Res. Technol 32 (1997) 61.
14. A. Rouzaud, D. Camel, J.J. Favier, J. Crystal Growth 73 (1985) 149.
15. A. Dahlen, A. Fattah, G. Hanke, E. Karthaus, Cryst. Res. Technol. 29 (1994) 187.
16. L. Helmers, J. Schilz, G. Bähr, J. Crystal Growth 165 (1996) 381.
17. K. Kadokura, Y. Takano, J. Crystal Growth 171 (1997) 56.
18. W.A. Tiller, K.A. Jackson, J.W. Rutter, B. Chalmers, Acta Metallurgica 1 (1953) 428.
19. A. Cröll, W. Müller-Sebert, K.W. Benz, R. Nitsche, Microgravity Sci. Technol. III/4 (1991) 204.
20. S.K. Ghandi, J.E. Ayers, J. Electrochem. Soc. 135 (1988) 2053.
21. A.F. Bogenschütz. Ätzprazis für Halbleiter, Carl Hanser Verlag, München, 1967.
22. P.D. Healey, J.E. Ayers, Acta Crystallorgr. A 52 (1996) 245.
23. J. Weber, M.I. Alonso, Phys. Rev. B 40 (1989) 5683.
24. M. Franz, K. Pressel, K.F. Dombrowski, H. Rücker, A. Barz, P. Dold, K.W. Benz, Proc. 19th Int. Conf. on Defects in Semiconductors (ICDS 19), Aveiro, 1997, to be published.
25. D.T.J. Hurle (Ed.), Handbook of Crystal Growth, vol. 2b, North-Holland, 1994, p. 813.
26. M. Schulz, H. Weiss (Eds.), Landolt-Börnstein, vol. 17c, Springer, Berlin, 1984.
27. E.K. Kamornik, E.D. Nensberg, G.V. Nikitina, A.G. Orlov, V.N. Romanenko, Inorg. Mater. 4 (1968) 667.
28. W. Zulehner, D. Huber, Crystals: Growth, Properties and Applications, vol. 8, Springer, Berlin, 1982.