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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 317-321

Oxygen in silicon doped with isovalent impurities

(4) Khirunenko, L I a Pomozov, Yu V a Sosnin, M G a Shinkarenko, V K a

a INSTITUTE OF PHYSICS (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; OXYGEN; SEMICONDUCTOR DOPING;

ISOVALENT IMPURITIES;

SEMICONDUCTING SILICON;

EID: 0033323999 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00455-X Document Type: Article

Times cited : (18)

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