Dislocation-free Czochralski Si crystal growth without a thin neck: Dislocation behavior due to incomplete seeding

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 58-64

  Taishi, Toshinori ^a   Huang, Xinming ^b   Yonenaga, Ichiro ^c   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b Silicon Technology Corporation   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Doping; A1. X ray topography; A2. Czochralski method; A2. Seed crystals; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

BORON; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

X-RAY TOPOGRAPHY;

CRYSTAL GROWTH FROM MELT;

EID: 0042331076     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01501-X     Document Type: Article

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