The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Nanotechnology

Volumn 16, Issue 10, 2005, Pages 2446-2449

  Ruess F J ^a   Oberbeck, L ^a   Goh, K E J ^a   Butcher, M J ^a   Gauja, E ^a   Hamilton, A R ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; IMAGING TECHNIQUES; LITHOGRAPHY; SCANNING TUNNELING MICROSCOPY; SILICON;

ATOMIC-RESOLUTION IMAGING; EPITAXIAL OVERGROWTH; OHMIC BEHAVIOR; P-DOPED WIRES;

ETCHING;

EID: 25644459259     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/10/076     Document Type: Article

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