The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(0 0 1)

Surface Science

Volumn 538, Issue 3, 2003, Pages

  Kim, J C ^a,b   Ji, J Y ^b   Kline, J S ^a   Tucker, J R ^a   Shen, T C ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UTAH STATE UNIVERSITY   (United States)

Author keywords

Epitaxy; Scanning tunneling microscopy; Silicon; Sputtering; Surface roughening; Surface structure, morphology, roughness, and topography

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACES;

SOLID PHASE EPITAXY (SPE);

SURFACE ROUGHNESS;

EID: 0038351928     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00730-1     Document Type: Article

References (27)

1. Ehrlich G., Hudda F. J. Chem. Phys. 44:1966;1039.
2. Kyuno K., Ehrlich G. Surf. Sci. 383:1997;L766.
3. Schwoebel R.L. J. Appl. Phys. 40:1969;614.
4. Politi P., Villain J. Phys. Rev. B. 54:1996;5114.
5. Van Nostrand J.E., Chey S.J., Hasan M.-A., Cahill D.G., Green J.E. Phys. Rev. Lett. 74:1995;1227.
6. Van Nostrand J.E., Chey S.J., Cahill D.G. Phys. Rev. B. 57:1998;12536.
7. Hamers R.J., Köhler U.K., Demuth J.E. J. Vac. Sci. Technol. A. 8:1990;195.
8. Bronikowski M.J., Wang Y., Hamers R.J. Phys. Rev. B. 48:1993;12361.
9. Spitzmüller J., Fehrenbacher M., Haug F., Rauscher H., Behm R.J. Appl. Phys. A. 66:1998;S1025.
10. Hoeven A.J., Dijkkamp D., Lenssinck J.M., van Loenen E.J. J. Vac. Sci. Technol. A. 8:1990;3657.
11. Zandvliet H.J.W., Zoethout E., Wulfhekel W., Poelsema B. Surf. Sci. 482-485:2001;391.
12. Zoethout E., van der Hoogenhof P.W., Zandvliet H.J.W., Poelsema B. J. Appl. Phys. 92:2002;5785.
13. Chey S.J., Van Nostrand J.E., Cahill D.G. Phys. Rev. B. 52:1995;16696.
14. Kim J., Cahill D.G., Averback R.S. Phys. Rev. B. 67:2003;045404.
15. Bedrossian P., Kaxiras E. Phys. Rev. Lett. 70:1993;2589.
16. Bedrossian P. Surf. Sci. 301:1994;223.
17. Zhang Z., Kulakov M.A., Bullemer B. Thin Solid Films. 294:1997;88.
18. Yao T., Uesugi K., Komura T., Yoshimura M. J. Crystal Growth. 163:1996;78.
19. Uesugi K., Yoshimura M., Yao T., Sato T., Sueyoshi T., Iwatsuki M. J. Vac. Sci. Technol. B. 12:1994;2018.
20. Zandvliet H.J.W., de Groot E. Surf. Sci. 371:1997;79.
21. Kern W. Semicond. Int. 7:1984;94.
22. Chadi D.J. Phys. Rev. Lett. 59:1987;1691.
23. Poate J.M., Williams J.S. Williams J.S., Poate J.M. Ion Implantation and Beam Processing. 1984;13-57 Academic Press, Sydney.
24. Chey S.J., van Nostrand J.E., Cahill D.G. Phys. Rev. Lett. 76:1996;3995.
25. Chey S.J., Cahill D.G. Duxbury P.M., Pence T.J. Dynamics of Crystal Surfaces and Interfaces. 1997;59-70 Plenum Press, New York.
26. Feil H., Zandvliet H.J.W., Tsai M.-H., Dow J.D., Tsong I.S.T. Phys. Rev. Lett. 69:1992;3076.
27. Zandvliet H.J.W. Surf. Sci. 377-379:1997;1.