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Volumn 90, Issue 3, 2001, Pages 1655-1659

Chemical and thermal stability of titanium disilicide contacts on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035423506     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1383264     Document Type: Article
Times cited : (9)

References (27)
  • 5
    • 0002586213 scopus 로고    scopus 로고
    • edited by C. Joachim and S. Roth Kluwer, Dordrecht
    • J. Nogami, in Atomic and Molecular Wires, edited by C. Joachim and S. Roth (Kluwer, Dordrecht, 1997), p. 11.
    • (1997) Atomic and Molecular Wires , pp. 11
    • Nogami, J.1
  • 12
    • 0345848779 scopus 로고    scopus 로고
    • note
    • As in the case of Au on Si we found adhesion between Ti and Si is generally lower when metal is deposited on the oxidized rather than on the hydrogen terminated surface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.