Fabrication of contact electrodes in Si for nanoelectronic devices using ion implantation

Applied Surface Science

Volumn 239, Issue 3-4, 2005, Pages 335-341

  Kim, J C ^a,b   Kline, J S ^a   Tucker, J R ^a  

^a United States of America   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Contact electrode; Ion implantation; SiC crystallite; UHV STM nanolithography

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DISSOLUTION; DOPING (ADDITIVES); ELECTRODES; ETCHING; IMPURITIES; ION IMPLANTATION; MOSFET DEVICES; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SPUTTERING; SURFACE ROUGHNESS; ULTRAHIGH VACUUM;

CONTACT ELECTRODES; SIC CRYSTALLITE; SURFACE CONTAMINATION; UHV STM NANOLITHOGRAPHY;

ELECTROCHEMISTRY;

EID: 10644230049     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.285     Document Type: Article

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