Nanoscale electronics based on two-dimensional dopant patterns in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3182-3185

  Shen, T C ^a   Kline, J S ^a,b   Schenkel, T ^c   Robinson, S J ^b   Ji, J Y ^a   Yang, C ^d   Du, R R ^d   Tucker, J R ^b  

^a UTAH STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PATTERNS; ELECTRON STIMULATED DESORPTION (ESD); NANOSCALE ELECTRONICS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ADSORPTION; ANNEALING; ELECTRON GAS; IONS; MAGNETORESISTANCE; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; ULTRAHIGH VACUUM;

SILICON;

EID: 13244294188     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1813466     Document Type: Conference Paper

References (15)

1. J. R. Tucker and T. C. Shen, Solid-State Electron. 42, 1061 (1998).
2. T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, and J. R. Tucker, Appl. Phys. Lett. 80, 1580 (2002). M. A. Zudov, C. L. Yang, R. R. Du, T.-C. Shen, J.-Y. Ji, J. S. Kline, and J. R. Tucker, cond-mat/0305482.
3. T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, and J. R. Tucker, Appl. Phys. Lett. 80, 1580 (2002). M. A. Zudov, C. L. Yang, R. R. Du, T.-C. Shen, J.-Y. Ji, J. S. Kline, and J. R. Tucker, cond-mat/0305482.
4. L. Oberbeck, N. J. Curson, M. Y Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, and R. G. Clark, Appl. Phys. Lett. 81, 3197 (2002)
5. S. R. Schofield, N. J. Curson, M. Y Simmons, F. J. Rueß, T. Hallam, L. Overbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003).
6. J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, Appl. Surf. Sci. 220, 293 (2003).
7. W. Kern, Semicond. Int. 7, 94 (1984).
8. T.-C. Shen, J. S. Kline. and J. R. Tucker (unpublished).
9. For a review of this technique, see T.-C. Shen and Ph. Avouris, Surf. Sci. 390, 35 (1997).
10. A. Fang, Y.-C. Chang, and J. R. Tucker (unpublished).
11. N. Clement, A. Francinelli, D. Tonneau, Ph. Scotto, F. Jandard, H. Dallaporta, V. Safarov, D. Fraboulet, and J. Gautier, Appl. Phys. Lett. 82, 1727 (2003).
12. K. K. Choi, D. C. Tsui, and K. Alavi, Phys. Rev. B 36, 7751 (1987).
13. F. J. Rueß, L. Oberbeck, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, N. J. Curson, and R. G. Clark (unpublished).
14. J. Melngailis, J. Vac. Sci. Technol. B 5, 469 (1987).
15. H. Iwano, S. Zaima, T. Kimura, K. Matsuo, and Y. Yasuda, Jpn. J. Appl. Phys., Part l 33, 7190 (1994).