Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 235-237

  Hersam, M C ^a   Abeln, G C ^a   Lyding, J W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

NANOELECTRONIC DEVICES; REVERSE SATURATION CURRENTS;

NANOTECHNOLOGY;

EID: 0032594650     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00203-8     Document Type: Article

References (4)

1. J. W. Lyding, T.-C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, Appl. Phys. Lett. 64, 2010 (1994).
2. J. W. Lyding, K. Hess, G. C. Abeln, D. S. Thompson, J. S. Moore, M. C. Hersam, E. T. Foley, J. Lee, Z. Chen, S.-T. Hwang, H. Choi, Ph. Avouris, and I. C. Kizilyalli, Appl. Surf. Sci., 130, 221 (1998).
3. S. Kordic, E. J. van Loenen, and A. J. Walker, JVST B, 10, 496 (1992).
4. Scanning Tunneling Microscopy, edited by J. A. Stroscio and W. J. Kaiser (Academic Press, Inc., San Diego, 1993), p. 51.