Formation of 15 nm scale Coulomb blockade structures in silicon by electron beam lithography with a bilayer resist process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3115-3118

  Park, S J ^a   Liddle, J A ^a   Persaud, A ^a   Allen, F I ^a   Schenkel, T ^a   Bokor, J ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOIMPRINTS; NANOWIRES; OXIDE LAYERS; SINGLE ELECTRON TRANSISTORS (SET);

ELECTRON BEAM LITHOGRAPHY; HYDROFLUORIC ACID; NANOSTRUCTURED MATERIALS; OPTIMIZATION; OXIDATION; PLASMA ETCHING; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); SILICON;

COULOMB BLOCKADE;

EID: 13244251453     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1825012     Document Type: Conference Paper

References (13)

1. A. Ionescu et al., 39th Design Automation Conference (DAC), 2002, pp. 88-93.
2. For an overview of single-electron devices and their applications, see K. K. Likharev, Proc. IEEE 87, 606 (1999).
3. B. E. Kane, Nature (London) 393, 133 (1998).
4. A. J. Skinner, M. E. Davenport, and B. E. Kane, Phys. Rev. Lett. 90, 087901 (2003).
5. T. M. Buehler, D. J. Reilly, R. P. Starrett, Andrew D. Greentree, A. R. Hamilton, A. S. Dzurak, and R. G. Clark, cond-mat/0304384 (2003).
6. T. Schenkel, A. Persaud, S. J. Park, J. Nilsson, J. Bokor, J. A. Liddle, R. Keller, D. H. Schneider, D. W. Cheng, and D. E. Humphries, J. Appl. Phys. 94, 7017 (2003).
7. H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi, J. Vac. Sci. Technol. B 21, 1 (2003).
8. E. S. Snow, P. M. Campbell, M. Twigg, and F. K. Perkins, Appl. Phys. Lett. 79, 1109 (2001).
9. L. Zhuang, L. Guo, and S. Y. Chou, Appl. Phys. Lett. 72, 1205 (1998).
10. A. Tilke, R. H. Blick, H. Lorenz, J. P. Kotthaus, and D. A. Wharam, Appl. Phys. Lett. 75, 3704 (1999).
11. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 3121 (2000).
12. D. L. Olynick and I. W. Rangelow, AVS 5th International Conference on Microelectronics and Interfaces (ICMI 2004), pp. 28-29.
13. J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, and M. J. Caldas, Phys. Rev. B 65, 245305 (2002).