Power performance and scalability of AlGaN/GaN power MODFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 10, 2000, Pages 1694-1700

  Alekseev, Egor ^a   Pavlidis, Dimitris ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS;

CARRIER CONCENTRATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL CONDUCTIVITY; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0034297683     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.873897     Document Type: Article

References (13)

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