Analysis of RF performances of GaN MESFETs including self-heating and trapping effects

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 459-462

  Islam, Syed S ^a   Anwar, A F M ^b  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b University of Connecticut   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GAIN CONTROL; GALLIUM NITRIDE; MODULATION; MONTE CARLO METHODS; POWER ELECTRONICS; SIGNAL PROCESSING;

SELF-HEATING;

MESFET DEVICES;

EID: 0042564486     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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