A physics-based model of frequency-dependent electrical characteristics of GaN MESFETs

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 69-70

  Islam, S S ^a   Anwar, A F M ^b   Webster, R T ^c  

^a Rochester Institute of Technology   (United States)

^b UNIVERSITY OF CONNECTICUT   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Electric variables; Electrons; Frequency; Gallium nitride; MESFETs; Military computing; Temperature dependence; Temperature sensors; Transconductance; Voltage

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONS; GALLIUM NITRIDE; TEMPERATURE DISTRIBUTION; TEMPERATURE SENSORS; TRANSCONDUCTANCE;

ELECTRIC VARIABLES; FREQUENCY; MESFETS; MILITARY COMPUTING; TEMPERATURE DEPENDENCE;

MESFET DEVICES;

EID: 84942613425     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226876     Document Type: Conference Paper

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4. S.C. Binari et al., IEEE Trans. on Electron Dev., Vol.48, p. 465, March 2001.
5. P. Hacke et al., J. Appl. Phys., Vol. 76, p. 304, July 1994.