Nonlinear analysis of GaN MESFETs with volterra series using large-signal models including trapping effects

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 11 SPEC, 2002, Pages 2474-2479

  Islam, Syed S ^a,b   Anwar, A F M ^a,c  

^a IEEE   (United States)

^b Rochester Institute of Technology   (United States)

^c UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

GaN MESFETs; Large signal modeling; Volterra series and intermodulation distortion

Indexed keywords

FREQUENCY DISPERSION; INTERMODULATION DISTORTION; LARGE SIGNAL MODELS; VOLTERRA SERIES TECHNIQUE;

CALCULATIONS; ELECTRIC RESISTANCE; ELECTRON TRAPS; FREQUENCY DOMAIN ANALYSIS; GALLIUM NITRIDE; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; INTERMODULATION; MATHEMATICAL MODELS; NONLINEAR NETWORK ANALYSIS; SIGNAL DISTORTION; TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 0036852198     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.804518     Document Type: Article

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