RF performance and thermal analysis of AlGaN/GaN power HEMTs in presence of self-heating effects

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 921-924

  Nuttinck, S ^a   Gebara, E ^b   Laskar, J ^a   Wagner, B ^c   Harris, M ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Quellan Inc   (United States)

^c GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; THERMOANALYSIS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE FIELD EFFECT TRANSISTOR; INTERMODULATION DISTORTION; POWER ADDED EFFICIENCY; SELF-HEATING EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036063546     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011780     Document Type: Article

References (16)

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14. Pulsed device measurements and applications
15. Analytical model for electrical and thermal transients of self-heating semiconductor devices
16. Measured microwave power performance of AlGaN/GaN MODFET