Ohmic contacts to Al-rich n-AlGaN

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1230-1231

  Readinger, E D ^a   Mohney, S E ^a   Pribicko, T G ^a   Wang, J H ^a   Schweitz, K O ^a   Chowdhury, U ^b   Wong, M M ^b   Dupuis, R D ^b   Pophristic, M ^c   Guo, S P ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The University of Texas at Austin   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; HETEROJUNCTIONS; OHMIC CONTACTS; OPTIMIZATION; TEMPERATURE;

ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037179901     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020800     Document Type: Article

References (4)

1. 0.6N', Mater. Res. Soc. Symp. Proc., 2001 680E, pp. E6.2.1-E.6.2.6
2. CAI, S.J., LI, R., CHEN, Y.I. WONG, L., WU, W.G., THOMAS, S.G., and WANG, K.L.: 'High performance AlGaN/GaN HEMT with improved ohmic contacts', Electron. Lett., 1998, 34, (24), pp. 2354-2356
3. SCHWEITZ, K.O., WANG, P.K., MOHNEY, S.E., and GOTTHOLD, D.: 'V/Al/Pt/Au ohmic contacts to n-AlGaN/GaN heterostructures', Appl. Phys. Lett., 2002, 80, (11), pp. 1954-1956
4. MARLOW, G.S. and DAS, M.B.: 'The effects of contact size and non-zero metal resistance on the determination of specific contact resistance', Solid-State Electron., 1982, 52, (2), pp. 91-94