Thermodynamic modeling of the Ni-Al-Ga-N system

Journal of Materials Research

Volumn 19, Issue 6, 2004, Pages 1742-1751

  Hull, B A ^a   Mohney, S E ^a   Liu, Z K ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BINARY MIXTURES; CALCULATIONS; COMPUTER SIMULATION; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; ISOTHERMS; PHASE DIAGRAMS; SCANNING ELECTRON MICROSCOPY; SURFACE REACTIONS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

CONDENSED PHASE REACTION PRODUCTS; INTERFACIAL REACTIONS; PHASE BOUNDARIES; QUARTERNARY SYSTEMS; SEMICONDUCTOR ALLOY; THERMODYNAMIC MODELING;

NICKEL ALLOYS;

EID: 3142688320     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0218     Document Type: Article

References (61)

1. S. Nakamura, S. Pearton, and G. Fasol: The Blue Laser Diode - Second Edition, (Springer, Berlin, Germany, 2000).
2. S. Nakamura, M. Senoh, and T. Mukai: High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390 (1993).
3. S.J. Pearton and F. Ren: GaN electronics. Advanced Materials 12, 1571 (2000).
4. H. Xing, S. Keller, Y-F. Wu, L. McCarthy, I.P. Smorchkova, D. Buttari, R. Coffie, D.S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J.J. Xu, B.P. Keller, S.P. DenBaars, and U.K. Mishra: Gallium nitride based transistors. J. Phys.: Condens. Matter 13, 7139 (2001).
5. Y-F. Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, and U.K. Mishra: Very-high power density AlGaN/GaN HEMTs. IEEE Trans. Electron Dev. 48, 586 (2001).
6. 0.89N Schottky diodes. IEEE Trans. Electron. Dev. 48, 573 (2001).
7. T. Egawa, G-Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo: Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire. IEEE Trans. Electron Dev. 48, 603 (2001).
8. E.D. Readinger, B.P. Luther, S.E. Mohney, and E.L. Piner: Environmental aging of Schottky contacts to n-AlGaN. J. Appl. Phys. 89, 7983 (2001).
9. 1-xN. Appl. Phys. Lett. 81, 1624 (2002).
10. 1-xN. Electron. Lett. 39, 747 (2003).
11. M. Kuball, S. Rajasingam, A. Sarua, M.J. Uren, T. Martin, B.T. Hughes, K.P. Hilton, and R.S. Balmer: Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Appl. Phys. Lett. 82, 124 (2003).
12. 1-xN) ohmic contact. Semiconductors 35, 529 (2001).
13. 0.85N. Jpn. J. Appl. Phys. 41, 581 (2002).
14. B.A. Hull, S.E. Mohney, U. Chowdhury, R.D. Dupuis, D. Gotthold, R. Birkhahn, and M. Pophristic: Contacts to high aluminum fraction p-type aluminum gallium nitride, in GaN and Related alloys - 2002, edited by C. Wetzel, E.T. Yu, J.S. Speck, A.Rizzi, and Y. Arakawa (Mater. Res. Soc. Symp. Proc. 743, Warrendale, PA, 2003), p. L12.2.
15. B.A. Hull: An investigation of the processing and properties of ohmic contacts to p-type aluminum gallium nitride. Ph.D. Thesis, The Pennsylvania State University (2004).
16. 1-xN beneath annealed metal contacts. J. Vac. Sci. Technol. B 22, 654 (2004).
17. J.O. Andersson, T. Helander, L.H. Hoglund, P.F. Shi, and B. Sundman: Thermo-Calc & DICTRA, computational tools for materials science. Calphad. 26, 273 (2002).
18. S. Ochiai, Y. Oya, and T. Suzuki, Bull. P.M.E. (T.I.T.) 52, 1 (1983).
19. C-H. Jan. Interfacial phenomena in the contact metallization of GaAs with Ni-based intermetallic alloys. Ph.D. Thesis, University of Wisconsin, Madison, Wisconsin (1991).
20. M. Hillert and L-I. Staffanson: Acta Chem. Scand. 24, 3618 (1970).
21. Scientific Group Thermodata Europe (SGTE): Thermodynamic Properties of Inorganic Materials, Lehrstuhl für Theoretische Hüttenkunde, Ed. Landolt-Boernstein New Series, Group IV, Springer-Verlag, Berlin, Germany 19, (1999).
22. I. Ansara, C. Chatillon, H.L. Lukas, T. Nishizawa, H. Ohtani, K. Ishida, M. Hillert, B. Sundman, B.B. Argent, A. Watson, T.G. Chart, and T. Anderson: A binary database for III-V compound semiconductor systems. Calphad. 18, 177 (1994).
23. W. Huang and Y.A. Chang: A thermodynamic analysis of the Ni-Al system, Intermetallics 6, 487 (1998).
24. W. Huang and Y.A. Chang: A thermodynamic analysis of the Ni-Al system, Intermetallics 7, 625 (1999).
25. I. Ansara, N. Dupin, H.L. Lukas, and B. Sundman: Thermodynamic assessment of the Al-Ni system. J. Alloys and Comp. 247, 20 (1997).
26. J. Gröbner, R. Wenzel, G.G. Fischer, and R. Schmid-Fetzer: Thermodynamic calculation of the binary systems M-Ga and investigation of ternary M-Ga-N phase equilibria (M = Ni, Co, Pd, Cr). J. Phase Equil. 20, 615 (1999).
27. W.B. Pearson and D.M. Rimek: Can. J. Phys. 35, 1228 (1957).
28. S. Martosudirjo and J.N. Pratt: Enthalpies of formation of solid nickel-gallium and nickel-germanium alloys. Thermochim. Acta. 17, 183 (1976).
29. B. Predel and W. Vogelbein: Thermodynamische untersuchung der systeme eisen - gallium und kobalt - gallium. Thermochim. Acta. 13, 133 (1975).
30. I. Katayama, S. Igi, and Z. Kozuka: J. Jpn. Inst. Met. 38, 332 (1973).
31. H.A. Wriedt: In Phase Diagrams of Binary Nickel Alloys, edited by P. Nash (ASM International, Materials Park, OH, 1991) pp. 213-216.
32. A. Fernández Guillermet and K. Frisk: International J. of Thermophysics 12, 417 ( 1991 ).
33. A.V. Davydov and T.J. Anderson: Thermodynamic assessment of the gallium-nitrogen system. Phys. Status Solidi 188, 407 (2001).
34. I. Barin: Thermochemical Data of Pure Substances, 2nd ed. (VCH, Weinheim, Germany 1993).
35. D.D. Wagman, W.H. Evans, V.B. Parker, I. Halow, S.M. Bailey, and R.H. Schumm. Selected Values of Chemical Thermodynamic Properties, NBS Technological Note 270-3, National Bureau of Standards, Washington, D.C. (1968).
36. O. Kubaschewski, C.B. Alcock, and P.J. Spencer. Materials Thermochemistry, 6th ed. (Pergamon Press, Oxford, U.K., 1993).
37. H. Hahn and R. Juza: Z. Anorg. Allg. Chem. 244, 111 (1940).
38. M.R. Ranade, F. Tessier, A. Novrotsky, V.J. Leppert, S.H. Risbud, F.J. DiSalvo, and C.M. Balkas: Enthalpy of gormation of gallium nitride. J. Phys. Chem. B 104, 4060 (2000).
39. R. Madar, G. Jacob, J. Hallais, and R. Fruchart: High pressure solution growth of GaN. J. Cryst. Growth 31, 197 (1975).
40. J. Karpinski and S. Porowski: High pressure thermodynamics of GaN. J. Cryst. Growth 66, 11 (1984).
41. X-L. Chen, Y-C. Lan, J-K. Liang, X-R. Cheng, Y-P. Xu, T. Xu, P-Z. Jiang, and K-Q. Lu: Chin. Phys. Lett. 16, 107 (1999).
42. J. Unland, B. Onderka, A. Davydov, and R. Schmid-Fetzer: Thermodynamics and phase stability in the Ga-N system. J. Cryst. Growth 256, 33 (2003).
43. T. Takayama, M. Yuri, K. Itoh, T. Saba, and J.S. Harris, Jr.: Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model. J. Cryst. Growth 222, 29 (2001).
44. T. Takayama, M. Yuri, K. Itoh, and J.S. Harris, Jr.: Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model. J. Appl. Phys. 90, 2358 (2001).
45. S.E. Mohney and X. Lin: Estimated phase equilibria in the transition metal-Ga-N systems: consequences for electrical contacts to GaN. J. Electron. Mater. 25, 811 (1996).
46. R.J. Sime and J.L. Margrave: Gaseous metal nitrides, II. the vapor pressure of GaN(s) and evidence for a complex gaseous nitride. J. Phys. Chem. 60, 810 (1956).
47. M.R. Lorenz and B.B. Binkowski: J. Electrochem. Soc. 109, 24 (1962).
48. Y. Morimoto: J. Electrochem. Soc. 121, 1383 (1974).
49. G. Jacob, R. Madar, and J. Hallais: Optimized growth conditions and properties of n-type and insulating GaN. Mater. Res. Bull. 11, 445 (1976).
50. M. Furtado and G. Jacob: Study on the influence of annealing effects in GaN VPE. J. Crystal Growth 64, 257 (1983).
51. A. Pisch and R. Schmid-Fetzer: In situ decomposition study of GaN thin films. J. Crystal Growth 187, 329 (1998).
52. A. Rebey, T. Boufaden, and B. El Jani: In situ optical monitoring of the decomposition of GaN thin films. J. Crystal Growth 203, 12 (1999).
53. K.O. Schweitz and S.E. Mohney: Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts toAlGaN. J. Electron. Mater. 30, 175 (2001).
54. P. Nash, M.F. Singleton, and J.L. Murray: in Phase Diagrams of Binary Nickel Alloys, edited by P. Nash (ASM International, Metals Park, OH, 1991) p. 3.
55. S.Y. Lee and P. Nash: in Phase Diagrams of Binary Nickel Alloys, edited by P. Nash (ASM International, Metals Park, OH, 1991) p. 133.
56. Handbook of Chemistry and Physics - 71st Edition, edited by D.R. Lide, CRC Press, Boca Raton (1990).
57. 2Ga and PdGa by high-temperature direct synthesis calorimetry. Thermochim. Acta. 292, 13 (1997).
58. S.V. Meschel and O.J. Kleppa: Standard enthalpies of formation of 4d aluminides by direct synthesis calorimetry. J. Alloys Comp. 191, 111 (1993).
59. B. Predel and D.W. Stein: Enthalpies of formation of binary compounds of gallium with copper, silver and gold and the analysis of thermodynamic properties of 3/2-electron-compounds. Acta Metall. 20, 681 (1972).
60. B. Predel and U. Schallner: Thermodynamische untersuchung der systeme aluminium-antimon und aluminium-gold. Mater. Sci. Engr. 5, 210 (1970).
61. F.R. de Boer, R. Boom, W.C.M. Mattens, A.R. Miedema, and A.K. Niessen: Cohesion in Metals: Transition Metal Alloys, (Elsevier, Amsterdam 1988).