High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors

IEICE Transactions on Electronics

Volumn E86-C, Issue 10, 2003, Pages 2051-2057

  Ao, Jin Ping ^a   Kikuta, Daigo ^a   Kubota, Naotaka ^a   Naoi, Yoshiki ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN; Cu gate; Gate leakage current; High electron mobility transistor; High temperature stability

Indexed keywords

ANNEALING; COPPER; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY;

GATE LEAKAGE CURRENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0242664193     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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