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Volumn 40, Issue 8, 2005, Pages 1649-1657

A compact model of MOSFET mismatch for circuit design

Author keywords

Analog design; Compact models; Matching; Mismatch; MOSFET

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NETWORKS (CIRCUITS); RANDOM PROCESSES; TRANSISTORS;

EID: 23744470875     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.852045     Document Type: Article
Times cited : (47)

References (48)
  • 1
    • 0021586347 scopus 로고
    • Random error effects in matched MOS capacitors and current sources
    • Dec.
    • J.-B. Shyu, G. C. Temes, and F. Krummenacher, "Random error effects in matched MOS capacitors and current sources," IEEE J. Solid-State Circuits, vol. SSC-19, no. 6, pp. 948-955, Dec. 1984.
    • (1984) IEEE J. Solid-state Circuits , vol.SSC-19 , Issue.6 , pp. 948-955
    • Shyu, J.-B.1    Temes, G.C.2    Krummenacher, F.3
  • 3
    • 0028369135 scopus 로고
    • Measurements of MOS current mismatch in the weak inversion region
    • Feb.
    • F. Forti and M. E. Wright, "Measurements of MOS current mismatch in the weak inversion region," IEEE J. Solid-State Circuits, vol. 29, no. 2, pp. 138-142, Feb. 1994.
    • (1994) IEEE J. Solid-state Circuits , vol.29 , Issue.2 , pp. 138-142
    • Forti, F.1    Wright, M.E.2
  • 4
    • 0030087383 scopus 로고    scopus 로고
    • Dependence of current match on back-gate bias in weakly inverted MOS transistor and its modeling
    • Feb.
    • M. J. Chen, J. S. Ho, and T. H. Huang, "Dependence of current match on back-gate bias in weakly inverted MOS transistor and its modeling," IEEE J. Solid-State Circuits, vol. 31, no. 2, pp. 259-262, Feb. 1996.
    • (1996) IEEE J. Solid-state Circuits , vol.31 , Issue.2 , pp. 259-262
    • Chen, M.J.1    Ho, J.S.2    Huang, T.H.3
  • 6
    • 0002757134 scopus 로고    scopus 로고
    • The dirty little secret: Engineers at design forum vexed by rise in process variations at the die level
    • Mar. 25
    • R. Wilson, "The dirty little secret: Engineers at design forum vexed by rise in process variations at the die level," EE Times, p. 1, Mar. 25, 2002.
    • (2002) EE Times , pp. 1
    • Wilson, R.1
  • 8
    • 0037346346 scopus 로고    scopus 로고
    • Understanding MOSFET mismatch for analog design
    • Mar.
    • P. G. Drennan and C. C. McAndrew, "Understanding MOSFET mismatch for analog design," IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 450-456, Mar. 2003.
    • (2003) IEEE J. Solid-state Circuits , vol.38 , Issue.3 , pp. 450-456
    • Drennan, P.G.1    McAndrew, C.C.2
  • 9
    • 0034466169 scopus 로고    scopus 로고
    • Impact of model errors on predicting performance of matching-critical circuits
    • M.-F. Lan and R. Geiger, "Impact of model errors on predicting performance of matching-critical circuits," in Proc. 43rd IEEE Midwest Symp. Circuits and Systems, 2000, pp. 1324-1328.
    • (2000) Proc. 43rd IEEE Midwest Symp. Circuits and Systems , pp. 1324-1328
    • Lan, M.-F.1    Geiger, R.2
  • 10
    • 0035017992 scopus 로고    scopus 로고
    • Modeling of random channel parameter variations in MOS transistors
    • _, "Modeling of random channel parameter variations in MOS transistors," in Proc. IEEE Int. Symp. Circuits and Systems (ISCAS), vol. I, 2001, pp. 85-88.
    • (2001) Proc. IEEE Int. Symp. Circuits and Systems (ISCAS) , vol.1 , pp. 85-88
  • 11
    • 0022891057 scopus 로고
    • Characterization and modeling of mismatch in MOS transistors for precision analog design
    • Dec.
    • K. R. Lakshmikumar, R. A. Hadaway, and M. A. Copeland, "Characterization and modeling of mismatch in MOS transistors for precision analog design," IEEE J. Solid-State Circuits, vol. SSC-21, no. 6, pp. 1057-1066, Dec. 1986.
    • (1986) IEEE J. Solid-state Circuits , vol.SSC-21 , Issue.6 , pp. 1057-1066
    • Lakshmikumar, K.R.1    Hadaway, R.A.2    Copeland, M.A.3
  • 12
    • 0242332714 scopus 로고    scopus 로고
    • Current mismatch due to local dopant fluctuations in MOSFET channel
    • Nov.
    • H. Yang, V. Macary, J. L. Huber, W.-G. Min, B. Baird, and J. Zuoet, "Current mismatch due to local dopant fluctuations in MOSFET channel, " IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2248-2254, Nov. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.11 , pp. 2248-2254
    • Yang, H.1    Macary, V.2    Huber, J.L.3    Min, W.-G.4    Baird, B.5    Zuoet, J.6
  • 13
    • 0016538539 scopus 로고
    • Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics
    • Aug.
    • R. W. Keyes, "Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics," IEEE J. Solid-State Circuits, vol. SSC-10, no. 4, pp. 245-247, Aug. 1975.
    • (1975) IEEE J. Solid-state Circuits , vol.SSC-10 , Issue.4 , pp. 245-247
    • Keyes, R.W.1
  • 14
    • 0028548950 scopus 로고
    • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
    • Nov.
    • T. Mizuno, J. Okumtura, and A. Toriumi, "Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2216-2221, Nov. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.11 , pp. 2216-2221
    • Mizuno, T.1    Okumtura, J.2    Toriumi, A.3
  • 16
    • 0030396105 scopus 로고    scopus 로고
    • The effect of statistical dopant fluctuations on MOS device performance
    • P. A. Stolk and D. B. M. Klaassen, "The effect of statistical dopant fluctuations on MOS device performance," in Int. Electron Devices Meeting Tech. Dig., 1996, pp. 627-630.
    • (1996) Int. Electron Devices Meeting Tech. Dig. , pp. 627-630
    • Stolk, P.A.1    Klaassen, D.B.M.2
  • 18
    • 0033732282 scopus 로고    scopus 로고
    • An analytical solution to a double-gate MOSFET with undoped body
    • May
    • Y. Taur, "An analytical solution to a double-gate MOSFET with undoped body," IEEE Electron Device Lett., vol. 21, no. 5, pp. 245-247, May 2000.
    • (2000) IEEE Electron Device Lett. , vol.21 , Issue.5 , pp. 245-247
    • Taur, Y.1
  • 20
    • 0029701860 scopus 로고    scopus 로고
    • Impact of transistor mismatch on the speed-accuracy-power trade-off of analog CMOS circuits
    • P. Kinget and M. Steyaert, "Impact of transistor mismatch on the speed-accuracy-power trade-off of analog CMOS circuits," in Proc. IEEE Custom Integrated Circuit Conf., 1996, pp. 333-336.
    • (1996) Proc. IEEE Custom Integrated Circuit Conf. , pp. 333-336
    • Kinget, P.1    Steyaert, M.2
  • 21
  • 22
    • 0002808741 scopus 로고    scopus 로고
    • A current-based MOSFET model for integrated circuit design
    • E. Sánchez-Sinencio and A. Andreou, Eds. Piscataway, NJ: IEEE Press, ch. 2
    • C. Galup-Montoro, M. C. Schneider, and A. I. A. Cunha, "A current-based MOSFET model for integrated circuit design," in Low-Voltage/Low-Power Integrated Circuits and Systems, E. Sánchez-Sinencio and A. Andreou, Eds. Piscataway, NJ: IEEE Press, 1998, ch. 2.
    • (1998) Low-voltage/Low-power Integrated Circuits and Systems
    • Galup-Montoro, C.1    Schneider, M.C.2    Cunha, A.I.A.3
  • 24
    • 0025251482 scopus 로고
    • Unified charge control model and subthreshold current in heterostructure field effect transistors
    • Jan.
    • Y. Byun, K. Lee, and M. Shur, "Unified charge control model and subthreshold current in heterostructure field effect transistors," IEEE Electron Device Lett., vol. 11, no. 1, pp. 50-53, Jan. 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , Issue.1 , pp. 50-53
    • Byun, Y.1    Lee, K.2    Shur, M.3
  • 25
    • 0042527394 scopus 로고    scopus 로고
    • A compact model for flicker noise in MOS transistors for analog circuit design
    • Aug.
    • A. Arnaud and C. Galup-Montoro, "A compact model for flicker noise in MOS transistors for analog circuit design," IEEE Trans. Electron Devices, vol. 50, no. 8, pp. 1815-1818, Aug. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.8 , pp. 1815-1818
    • Arnaud, A.1    Galup-Montoro, C.2
  • 26
    • 0033097012 scopus 로고    scopus 로고
    • Derivation of the unified charge control model and parameter extraction procedure
    • Mar.
    • A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro, "Derivation of the unified charge control model and parameter extraction procedure," Solid-State Electron., vol. 43, no. 03, pp. 481-485, Mar. 1999.
    • (1999) Solid-state Electron. , vol.43 , Issue.3 , pp. 481-485
    • Cunha, A.I.A.1    Schneider, M.C.2    Galup-Montoro, C.3
  • 27
    • 0029342165 scopus 로고
    • An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
    • C. C. Enz, F. Krummenacher, and E. A. Vittoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications," Analog Integrated Circuits Signal Process., vol. 8, pp. 83-114, 1995.
    • (1995) Analog Integrated Circuits Signal Process. , vol.8 , pp. 83-114
    • Enz, C.C.1    Krummenacher, F.2    Vittoz, E.A.3
  • 28
    • 0025434759 scopus 로고
    • A physics-based MOSFET noise model for circuit simulators
    • May
    • K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A physics-based MOSFET noise model for circuit simulators," IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1323-1333, May 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.5 , pp. 1323-1333
    • Hung, K.K.1    Ko, P.K.2    Hu, C.3    Cheng, Y.C.4
  • 31
    • 4344717117 scopus 로고    scopus 로고
    • Low-power CMOS data conversion
    • E. Sánchez-Sinencio and A. G. Andreou, Eds. Piscataway, NJ: IEEE Press, ch. 14
    • M. J. M. Pelgrom, "Low-power CMOS data conversion," in Low-Voltage/Low-Power Intergraled Circuits and Systems, E. Sánchez-Sinencio and A. G. Andreou, Eds. Piscataway, NJ: IEEE Press, 1999, ch. 14.
    • (1999) Low-voltage/Low-power Intergraled Circuits and Systems
    • Pelgrom, M.J.M.1
  • 32
    • 0030084540 scopus 로고    scopus 로고
    • Influence of statistical spacial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFETs
    • T. Mizuno, "Influence of statistical spacial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFETs," Jpn. J. Appl. Phys., vol. 35, pp. 842-848, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 842-848
    • Mizuno, T.1
  • 34
  • 35
    • 0031188590 scopus 로고    scopus 로고
    • CMOS technology for mixed signal ICs
    • Jul.
    • M. Pelgrom and M. Vertregt, "CMOS technology for mixed signal ICs," Solid-State Electron., vol. 41, no. 7, pp. 967-974, Jul. 1997.
    • (1997) Solid-state Electron. , vol.41 , Issue.7 , pp. 967-974
    • Pelgrom, M.1    Vertregt, M.2
  • 39
    • 0742268981 scopus 로고    scopus 로고
    • Threshold voltage mismatch and intra-die leakage current in digital CMOS circuits
    • Jan.
    • J. Pineda-Gyvez and H. P. Tuinhout, "Threshold voltage mismatch and intra-die leakage current in digital CMOS circuits," IEEE J. Solid-State Circuits, vol. 39, no. 1, pp. 157-168, Jan. 2004.
    • (2004) IEEE J. Solid-state Circuits , vol.39 , Issue.1 , pp. 157-168
    • Pineda-Gyvez, J.1    Tuinhout, H.P.2
  • 41
    • 0031163318 scopus 로고    scopus 로고
    • A CMOS mismatch model and scaling effects
    • Jun.
    • W. Shyh-Chyi, P. Kuo-Hua, and M. Dye-Jyun, "A CMOS mismatch model and scaling effects," IEEE Electron Device Lett., vol. 18, no. 6, pp. 261-263, Jun. 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , Issue.6 , pp. 261-263
    • Shyh-Chyi, W.1    Kuo-Hua, P.2    Dye-Jyun, M.3
  • 44
  • 46
    • 0021483220 scopus 로고
    • Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion - Influence of interface states
    • Sep.
    • G. Reimbold, "Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion - Influence of interface states," IEEE Trans. Electron Devices, vol. ED-31, no. 9, pp. 1190-1198, Sep. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.9 , pp. 1190-1198
    • Reimbold, G.1
  • 47
    • 84886448051 scopus 로고    scopus 로고
    • Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation
    • K. Takeuchi, T. Tatsumi, and A. Furukawa, "Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation," in Int. Electron Devices Meeting Tech. Dig., 1997, pp. 841-844.
    • (1997) Int. Electron Devices Meeting Tech. Dig. , pp. 841-844
    • Takeuchi, K.1    Tatsumi, T.2    Furukawa, A.3
  • 48
    • 0014777697 scopus 로고
    • Theory of low frequency noise in Si MOSTs
    • F. Berz, "Theory of low frequency noise in Si MOSTs," Solid-State Electron., vol. 13, pp. 631-647, 1970.
    • (1970) Solid-state Electron. , vol.13 , pp. 631-647
    • Berz, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.