Current Mismatch Due to Local Dopant Fluctuations in MOSFET Channel

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2248-2254

  Yang, Hongning ^a   Macary, Véronique ^a   Huber, John L ^a   Min, Won Gi ^a   Baird, Bob ^a   Zuo, Jiangkai ^a  

^a MOTOROLA INC   (United States)

Author keywords

Matching; MOSFETs; Semiconductor device doping; Semiconductor device modeling

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; SEMICONDUCTOR DOPING;

CURRENT MISMATCH;

MOSFET DEVICES;

EID: 0242332714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.818282     Document Type: Article

References (9)

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