Derivation of the unified charge control model and parameter extraction procedure

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 481-485

  Cunha, Ana Isabela Araújo ^a,b   Schneider, Márcio Cherem ^a   Galup Montoro, Carlos ^a  

^a FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

^b FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; VOLTAGE CONTROL;

PARAMETER EXTRACTION METHOD; UNIFIED CHARGE CONTROL MODEL;

MOSFET DEVICES;

EID: 0033097012     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00285-8     Document Type: Article

References (5)

1. Park C-K, Lee C-Y, Lee K, Moon B-J, Byun YH, Shur M. IEEE Trans Electron Dev 1991;ED-38:399.
2. Lee K., Shur M., Fjeldly T.A., Ytterdal T. Semiconductor device modeling for VLSI. Englewoods Cliffs: Prentice Hall, 1993.
3. Cunha AIA, Schneider MC, Galup-Montoro C. Solid-St Electron 1995;38:1945.
4. Enz CC, Krummenacher F, Vittoz EA. Anal Integr Circuits Signal Proc 1995;8:83.
5. Tsividis Y. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.