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Volumn 33, Issue 10, 1998, Pages 1510-1519

An MOS transistor model for analog circuit design

Author keywords

Circuit modeling; Integrated circuit design; MOS analog integrated circuits; MOS devices

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; LINEAR INTEGRATED CIRCUITS; MOSFET DEVICES; TRANSCONDUCTANCE;

EID: 0032188612     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.720397     Document Type: Article
Times cited : (286)

References (12)
  • 1
    • 0028386555 scopus 로고
    • MOSFET modeling for analog circuit CAD: Problems and prospects
    • Mar.
    • Y. P. Tsividis and K. Suyama, "MOSFET modeling for analog circuit CAD: Problems and prospects," IEEE J. Solid-State Circuits, vol. 29, pp. 210-216, Mar. 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , pp. 210-216
    • Tsividis, Y.P.1    Suyama, K.2
  • 3
    • 0029342165 scopus 로고
    • An analytical MOS transistor model valid in all regions of Operation and dedicated to low-voltage and low-current applications
    • C. C. Enz, F. Krummenacher, and E. A. Vittoz, "An analytical MOS transistor model valid in all regions of Operation and dedicated to low-voltage and low-current applications," Analog Integrated Circuits Signal Process., vol. 8, pp. 83-114, 1995.
    • (1995) Analog Integrated Circuits Signal Process. , vol.8 , pp. 83-114
    • Enz, C.C.1    Krummenacher, F.2    Vittoz, E.A.3
  • 4
    • 0030241117 scopus 로고    scopus 로고
    • D based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
    • Sept.
    • D based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA," IEEE J. Solid-State Circuits, vol. 31, pp. 1314-1319, Sept. 1996.
    • (1996) IEEE J. Solid-State Circuits , vol.31 , pp. 1314-1319
    • Silveira, F.1    Flandre, D.2    Jespers, P.G.A.3
  • 5
    • 0029406842 scopus 로고
    • An explicit physical model for the long-channel MOS transistor including small-signal parameters
    • A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro, "An explicit physical model for the long-channel MOS transistor including small-signal parameters," Solid-State Electron., vol. 38, no. 11, pp. 1945-1952, 1995.
    • (1995) Solid-State Electron. , vol.38 , Issue.11 , pp. 1945-1952
    • Cunha, A.I.A.1    Schneider, M.C.2    Galup-Montoro, C.3
  • 6
    • 0003247958 scopus 로고
    • A physical charge-controlled model for MOS transistors
    • P. Losleben, Ed. Cambridge, MA: MIT Press
    • M. A. Maher and C. A. Mead, "A physical charge-controlled model for MOS transistors," in Advanced Research in VLSI, P. Losleben, Ed. Cambridge, MA: MIT Press, 1987.
    • (1987) Advanced Research in VLSI
    • Maher, M.A.1    Mead, C.A.2
  • 7
    • 0020834178 scopus 로고
    • On the small-signal behavior of the MOS transistor in quasistatic operation
    • Oct.
    • C. Turchetti, G. Masetti, and Y. Tsividis, "On the small-signal behavior of the MOS transistor in quasistatic operation," Solid-State Electron., vol. 26, no. 10, pp. 941-949, Oct. 1983.
    • (1983) Solid-State Electron. , vol.26 , Issue.10 , pp. 941-949
    • Turchetti, C.1    Masetti, G.2    Tsividis, Y.3
  • 8
  • 9
    • 0022152815 scopus 로고
    • A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation
    • Nov.
    • M. Bagheri and Y. Tsividis, "A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation," IEEE Trans. Electron Devices, vol. 32, pp. 2383-2391, Nov. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 , pp. 2383-2391
    • Bagheri, M.1    Tsividis, Y.2
  • 10
    • 11644250622 scopus 로고
    • A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors
    • J. A. Van Nielen, "A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors," Solid-State Electron., vol. 12, pp. 826-829, 1969.
    • (1969) Solid-State Electron. , vol.12 , pp. 826-829
    • Van Nielen, J.A.1
  • 12
    • 0017932965 scopus 로고
    • A charge sheet model for the MOSFET
    • J. R. Brews, "A charge sheet model for the MOSFET," Solid-State Electron., vol. 21, pp. 345-355, 1978.
    • (1978) Solid-State Electron. , vol.21 , pp. 345-355
    • Brews, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.