Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 5, Issue , 2004, Pages

  Klimach, H ^a,b   Arnaud, A ^c   Schneider, M C ^a   Galup Montoro, C ^a  

^a FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^c UNIVERSIDAD DE LA REPÚBLICA   (Uruguay)

Author keywords

Analog design; Compact models; Matching; MOSFET

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; FERMI LEVEL; INTEGRATION; MATHEMATICAL MODELS; RANDOM PROCESSES; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

ANALOG DESIGN; COMPACT MODELS; MATCHING; MOSFET;

MOSFET DEVICES;

EID: 4344664589     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

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