High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4084-4092

  Simoen, E ^a   Marcha, A ^a   Rafi J M ^a   Claeys, C ^a,c   Lukyanchikova, N B ^b   Smolanka, A M ^b   Garbar, N ^b  

^a imec   (Belgium)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOLE TRAPS; IONIZATION; MATHEMATICAL MODELS; POLYSILICON; PROTON IRRADIATION; SEMICONDUCTOR DOPING; SHOT NOISE; SILICON ON INSULATOR TECHNOLOGY;

CHARGE TRAPPING; CONDUCTION BAND; ELECTRON VALENCE BAND (EVB) TUNNELING; LORENTZIAN NOISE;

MOSFET DEVICES;

EID: 2342580261     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1686898     Document Type: Article

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