Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 747-758

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Simoen, E ^b   Mercha, A ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); IMPACT IONIZATION; NITRIDING; SEMICONDUCTOR JUNCTIONS; SHOT NOISE; SIGNAL FILTERING AND PREDICTION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SPECTRUM ANALYSIS; THRESHOLD VOLTAGE;

ELECTRON VALENCE BAND (EVB); HALO IMPLANTATION; LORENTZIAN NOISE; SHORT-CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 1242265409     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.036     Document Type: Article

References (13)

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