A 5 nm nitrided gate oxide for 0.25 SOI CMOS technologies

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1824-1829

  Liu, S T ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; GATE OXIDE INTEGRITY; HOT CARRIER LIFETIME; OXYNITRIDE GATE DIELECTRIC; RADIATION RESPONSE;

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; HOT CARRIERS; LEAKAGE CURRENTS; OXIDES; RADIATION; RADIATION HARDENING; SILICON ON INSULATOR TECHNOLOGY; SPACE APPLICATIONS; THRESHOLD VOLTAGE; ULSI CIRCUITS;

GATES (TRANSISTOR);

EID: 0033324555     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819160     Document Type: Article

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