Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 775-783

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; SILICON ON SAPPHIRE TECHNOLOGY; SPURIOUS SIGNAL NOISE;

ACCUMULATION MODE MOSFET; DEPLETION MODE MOSFET; DRAIN CURRENT; ENHANCEMENT MODE MOSFET; GENERATION RECOMBINATION NOISE; LOW FREQUENCY CURRENT NOISE; NOISE RELAXATION TIME; SPECTRAL DENSITY;

MOSFET DEVICES;

EID: 0033188873     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/306     Document Type: Article

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