Back and front interface related generation-recombination noise in buried-channel SOI pMOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 3, 1996, Pages 417-423

  Lukyanchikova, N ^a   Petrichuk, M ^b   Garbar, N ^b   Simoen, Eddy ^b   Claeys, Cor ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b 1MEC ^*  (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRODES; FUNCTIONS; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; THIN FILMS;

BACK GATE BIAS; BACK INTERFACE; BURIED CHANNEL OPERATION; FRONT INTERFACE; GENERATION RECOMBINATION NOISE; LINEAR OPERATION MODE; LORENTZIAN CORNER FREQUENCY;

MOSFET DEVICES;

EID: 0030107494     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485655     Document Type: Article

References (10)

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