Emerging silicon carbide power device technologies

Journal of Wide Bandgap Materials

Volumn 7, Issue 3, 2000, Pages 179-191

  Elford, Andrew ^a   Mawby, Philip Andrew ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

MOSFET's; Power devices; SiC; Silicon carbide

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; MOSFET DEVICES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES;

BANDGAP SEMICONDUCTORS; MOSFET; POWER DEVICES; SIC;

SILICON CARBIDE;

EID: 23344442558     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/HX1N-DL9K-YK3X-UY54     Document Type: Article

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