High-voltage (2.6 kV) lateral DMOSFETs in 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1005-1008

  Spitz, J ^a   Melloch, M R ^a   Cooper Jr , J A ^a   Capano, M A ^b  

^a PURDUE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

DMOS; LDMOS; Power MOSFETs; RESURF; Semiconductor on Insulator; SOI

Indexed keywords

SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON CARBIDE; SILICON WAFERS;

BLOCKING VOLTAGES; DOUBLE IMPLANTED MOSFETS (DMOSFET);

MOSFET DEVICES;

EID: 11644295061     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1005     Document Type: Article

References (6)

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5. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, IEEE Device Res. Conf., Ft. Collins, CO, June 1997 (late news).
6. J. A. Appels and H. M. J. Vaes, IEDM Tech Dig. (1979), p. 238.