Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1037-1040

  Neudeck, P G ^a   Fazi, C ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Bulk Recombination; Minority Carrier Lifetime; pn Junction Diode; Rectifiers; Reverse Breakdown; Reverse Recovery; Solid State Power Devices; Surface Recombination

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RECTIFIERS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

BULK RECOMBINATION; SURFACE RECOMBINATION;

SEMICONDUCTOR DIODES;

EID: 0031675103     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (7)

1. P. G. Neudeck and C. Fazi, J. Appl. Physics 80 (1996), p.1219.
2. P. G. Neudeck, et. al., Trans. 3rd Int. High Temp. Elect. Conf. 2 (1996), p. XVI-15.
3. P. Neudeck and C. Fazi, IEEE Electron Dev. Lett. 18 (1997), p. 96.
4. P. G. Neudeck, submitted to J. Electron. Mater. (1997).
5. S. M. Sze, Physics of Semiconductor Devices, 2nd. ed. (New York: Wiley 1981), p. 61.
6. G. Neudeck, The PN Junction Diode, 2nd. ed. (Reading, MA: Addison-Wesley 1989), p. 111.
7. C. H. Henry, R. A. Logan, and F. R. Merritt, J. Appl. Phys. 49 (1978), p. 3530.