Temperature dependence of turn-on process in 4H-SiC thyristors

Electronics Letters

Volumn 33, Issue 10, 1997, Pages 914-915

  Dyakonova, N V ^a   Levinshtein, M E ^a   Palmour, J W ^a   Rumyantsev, S L ^a   Singh, R ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIFFUSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMAL EFFECTS;

SILICON CARBIDE THYRISTOR; TURN ON PROCESS;

THYRISTORS;

EID: 0031559331     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970563     Document Type: Article

References (6)