4H-SiC Gate Turn-Off (GTO) thyristor development

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1069-1072

  Casady, J B ^a   Agarwal, A K ^a   Rowland, L B ^a   Siergiej, R R ^a   Seshadri, S ^a   Mani, S ^a   Barrows, J ^b   Piccone, D ^b   Sanger, P A ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Silicon Power Corporation   (United States)

Author keywords

GTO; High Temperature; Power Electronics; Power Switching; Rectifier; Thyristor

Indexed keywords

CURRENT DENSITY; ELECTRIC RECTIFIERS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL EFFECTS;

FORWARD BLOCKING VOLTAGES; FORWARD VOLTAGE DROP; POWER SWITCHING;

THYRISTORS;

EID: 0031648427     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1069     Document Type: Article

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