The dual gate emitter switched thyristor (DG-EST)

IEEE Electron Device Letters

Volumn 17, Issue 1, 1996, Pages 25-27

  Sridhar, S ^b   Baliga, B J ^a,b  

^a IEEE

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

CONVENTIONAL EMITTER SWITCHED THYRISTOR; DUAL GATE EMITTER SWITCHED THYRISTOR; HIGH VOLTAGE CURRENT SATURATION FEATURES; INDEPENDENT GATE ELECTRODES; ON STATE VOLTAGE DROPS;

THYRISTORS;

EID: 0029752897     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.475566     Document Type: Article

References (10)

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8. M. Nandakumar, B. J. Baliga, M. S. Shekar, S. Tandon, and A. Reisman, "The base resistance controlled thyristor (BRT): A new MOS-gated power thyristor," Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's 1991, pp. 138-141.
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