Inversion layer mobility in SiC MOSFETs

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 997-1000

  Sridevan, S ^a   Baliga, B J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Deposited Oxide; Inversion Mobility; Lateral Devices; MOSFETs; Planar

Indexed keywords

ANNEALING; DEPOSITION; DIELECTRIC DEVICES; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

INVERSION LAYER ELECTRON MOBILITY;

MOSFET DEVICES;

EID: 11644309653     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.997     Document Type: Article

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