Ohmic contact properties of Ni/C film on 4H-SiC

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 2001-2010

  Lu, Weijie ^a   Mitchel, W C ^b   Landis, G R ^c   Crenshaw, T R ^a   Collins, W Eugene ^a  

^a FISK UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

Electrical contact properties; Graphitization; Ohmic contact; SiC

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CATALYSTS; GRAPHITIZATION; MORPHOLOGY; NICKEL; OHMIC CONTACTS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

CONTACT RESISTIVITIES;

SILICON CARBIDE;

EID: 0042229227     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00165-5     Document Type: Article

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