Positively charged carbon vacancy in 6H-SiC: EPR study

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 621-624

  Bratus, V Ya ^a   Makeeva, I N ^a   Okulov, S M ^a   Petrenko, T L ^a   Petrenko, T T ^a   Von Bardeleben, H J ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

Carbon vacancy; EPR; Intrinsic defect; Silicon carbide

Indexed keywords

CARBON; CRYSTAL DEFECTS; DISCRETE FOURIER TRANSFORMS; ELECTRON IRRADIATION; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; TENSORS;

INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 0035673552     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00755-4     Document Type: Article

References (9)